Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime

Autor:	Hsiao-Yu Chang, Shixuan Yang, Deji Akinwande, Maruthi N. Yogeesh, Sanjay K. Banerjee, Amritesh Rai, Atresh Sanne, Rudresh Ghosh, Nanshu Lu
Rok vydání:	2015
Předmět:	Materials science Nanotechnology Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Bending 010402 general chemistry 01 natural sciences law.invention Hardware_GENERAL law Monolayer Hardware_INTEGRATEDCIRCUITS General Materials Science Analogue electronics business.industry Mechanical Engineering Transistor 021001 nanoscience & nanotechnology Flexible electronics Cutoff frequency 0104 chemical sciences Nanoelectronics Mechanics of Materials Optoelectronics Radio frequency 0210 nano-technology business
Zdroj:	Advanced Materials. 28:1818-1823
ISSN:	0935-9648
DOI:	10.1002/adma.201504309
Popis:	Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10,000 bending cycles.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba6ef5becd49b48f648569468d33e495 https://doi.org/10.1002/adma.201504309 Zobrazit plný text záznamu Plný text