Trivacancy-oxygen complex in silicon: Local vibrational mode characterization
| Autor: | J. L. Lindström, B. G. Svensson, Vladimir P. Markevich, L.I. Murin, Charalamos A. Londos |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Atmospheric temperature range Condensed Matter Physics Crystallographic defect Electronic Optical and Magnetic Materials Nuclear magnetic resonance chemistry Absorption band Molecular vibration Electron beam processing Irradiation Electrical and Electronic Engineering |
| Zdroj: | Physica B: Condensed Matter. 404:4568-4571 |
| ISSN: | 0921-4526 |
| Popis: | FTIR study of the evolution of multivacancy-oxygen-related defects in the temperature range 100-350 degrees C in Czochralski-grown Si samples irradiated with different particles (10 MeV electrons and 5 MeV neutrons) has been carried out. Appearance of two absorption bands positioned at 833.4 and 842.4 cm(-1) has been found upon annealing of the divacancy related absorption band at 2767 cm(-1). The 833.4 cm(-1) band is assigned to a divacancy-oxygen defect. The 842.4 cm band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect formed via interaction of mobile V-3 with O-i atoms. (C) 2009 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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