Ultrahigh spontaneous emission extraction efficiency induced by evanescent wave coupling
Autor: | Mutsuo Ogura, S. Furue, X. L. Wang, Valia Voliotis, Roger Grousson, A. Enderlin, Marco Ravaro |
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Přispěvatelé: | Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Japan Society for the Promotion of Science [17360170] |
Rok vydání: | 2009 |
Předmět: |
III-V semiconductors
Materials science Photoluminescence Physics and Astronomy (miscellaneous) light reflection 02 engineering and technology Substrate (electronics) 7. Clean energy 01 natural sciences Gallium arsenide chemistry.chemical_compound 0103 physical sciences Spontaneous emission [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] spontaneous emission Quantum well semiconductor quantum wells 010302 applied physics Coupling Total internal reflection business.industry Extraction (chemistry) aluminium compounds 021001 nanoscience & nanotechnology gallium arsenide chemistry Optoelectronics photoluminescence 0210 nano-technology business |
Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2009, 94 (9), ⟨10.1063/1.3086887⟩ Applied Physics Letters, 2009, 94 (9), ⟨10.1063/1.3086887⟩ |
ISSN: | 1077-3118 0003-6951 |
Popis: | International audience; A spontaneous emission extraction efficiency greater than 50% is observed in a GaAs/AlGaAs quantum well structure grown on the subwavelength-sized ridge top facet of a V-grooved substrate by means of photoluminescence study. This is an extraction efficiency about 20 times higher than that of a similar structure grown on a flat substrate. It is demonstrated both experimentally and theoretically that the high extraction efficiency is the result of the efficient conversion of evanescent waves into propagating waves in air through constructive coupling of evanescent waves generated on the two sidewall facets of the V-grooved substrate by total internal reflection. |
Databáze: | OpenAIRE |
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