Static Current-Voltage Characteristics of Silicon n+-i-n+ Resistors at Liquid Helium Temperatures
| Autor: | N. Glezos, D. Tsamakis |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1996 |
| Předmět: |
Silicon
Intrinsic semiconductor Liquid helium Negative resistance General Physics and Astronomy chemistry.chemical_element Semiconductor device 01 natural sciences Molecular physics 010305 fluids & plasmas law.invention Impact ionization chemistry law Impurity [PHYS.HIST]Physics [physics]/Physics archives 0103 physical sciences Resistor |
| Zdroj: | Journal de Physique IV Proceedings Journal de Physique IV Proceedings, EDP Sciences, 1996, 06 (C3), pp.C3-93-C3-98. ⟨10.1051/jp4:1996314⟩ |
| ISSN: | 1155-4339 1764-7177 |
| DOI: | 10.1051/jp4:1996314⟩ |
| Popis: | The behaviour of the (I-V) characteristics is investigated in n + -i-n + highly compensated Si resistors at temperatures 4.2-45K. The conduction mechanisms are discussed in detail here. The prebreakdown and breakdown regions of I-V characteristics were simulated by a one-dimensional model including the evidence of impurity high compensation and freeze out effects as well as the shallow-dopants impact ionisation by the injected hot carriers into the base. Negative resistance (S-type) phenomena are also observed on the characteristics for high injection current densities. |
| Databáze: | OpenAIRE |
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