In-Situ Phosphrous Doping in ZnTe Nanowires with Enhanced p-type Conductivity
| Autor: | Chun-Sing Lee, Lin-Bao Luo, Shuit-Tong Lee, Yu-Lin Cao, Yongbing Tang, Z. T. Liu, L. M. Chen |
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| Rok vydání: | 2012 |
| Předmět: |
Diffraction
Photoluminescence Materials science business.industry Doping Biomedical Engineering Nanowire Bioengineering General Chemistry Conductivity Condensed Matter Physics X-ray photoelectron spectroscopy Optoelectronics General Materials Science Electrical measurements business Deposition (law) |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 12:2353-2359 |
| ISSN: | 1533-4880 |
| DOI: | 10.1166/jnn.2012.5752 |
| Popis: | Single-crystalline undoped and phosphrous-doped (P-doped) p-type ZnTe nanowires (NWs) were synthesized via a simple vapor transport and deposition method. Both undoped and P-doped ZnTe nanowires have zinc blende structure and uniform geometry. X-ray diffraction peaks of the P-doped ZnTe nanowires show an obvious shift toward higher diffraction angle as compared with the undoped ZnTe nanowires. X-ray photoelectron spectroscopy confirms the existence of P-dopant in the ZnTe nanowires. Field-effect transistors based on both undoped and P-doped ZnTe nanowires were fabricated and characterized. Electrical measurements demonstrated that P-doping led to an enhancement in ptype conductivity of ZnTe nanowires. A defect reaction mechanism was proposed to explain the p-type behaviors of both undoped and P-doped ZnTe nanowires. |
| Databáze: | OpenAIRE |
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