Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond
| Autor: | François Jomard, Solange Temgoua, Thierry Kociniewski, Rémi Gillet, I. Stenger, Marie-Amandine Pinault-Thaury, E. Chikoidze, Yves Dumont, Julien Barjon |
|---|---|
| Přispěvatelé: | Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2021 |
| Předmět: |
[PHYS]Physics [physics]
Electron mobility Materials science Phosphorus Doping Analytical chemistry Diamond chemistry.chemical_element 02 engineering and technology General Chemistry engineering.material Conductivity 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Phosphorus doped chemistry engineering General Materials Science [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] 0210 nano-technology Layer (electronics) |
| Zdroj: | Carbon Carbon, 2021, 175, pp.254-258. ⟨10.1016/j.carbon.2021.01.011⟩ |
| ISSN: | 0008-6223 |
| DOI: | 10.1016/j.carbon.2021.01.011 |
| Popis: | International audience; A (113) diamond homoepilayer doped with phosphorus is grown. It presents high crystalline quality and n-type conductivity with a maximum electron mobility of 355 cm 2 /V.s at 450K. Its electrical properties are compared to those measured on conventionally oriented (100) and (111) homoepilayers synthetized in the same reactor with similar phosphorus content (~1e2x10 18 at/cm 3). The (113) layer presents higher electron mobility than the (100) film, despite a comparable compensation ratio. Besides, above 450 K the (113) electron mobility is also higher than the one of the low compensated (111) sample. This shows the attractive character of the (113) diamond orientation for n-type doping. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect