Reduction of x-ray irradiation-induced pattern displacement of SiN membranes using H+ion implantation technique

Autor:	Kinya Ashikaga, Yoshio Yamashita, Shinji Tsuboi, Tsuneaki Ohta, Masanori Kasai, Hiroshi Hoga, Syuichi Noda
Předmět:	Materials science General Engineering Analytical chemistry General Physics and Astronomy Synchrotron radiation chemistry.chemical_compound Ion implantation Membrane Silicon nitride chemistry X-ray lithography Irradiation Absorption (electromagnetic radiation) Layer (electronics)
Zdroj:	Scopus-Elsevier
Popis:	We have developed a technique for improving X-ray irradiation stability of silicon nitride (SiN) X-ray mask membrane using H+ implantation. This technique can realize the reduction of X-ray irradiation-induced pattern displacement to less than 20 nm after X-ray absorption with a dose of 30 MJ/cm3 by optimizing the implantation dose to 4×1015/ cm2 at 150 keV. It is found that the mechanism of the reduction of the displacement is that the stress change after X-ray absorption in the implanted layer (top to 1.1 µ m in depth) of SiN film compensates the stress change in the unimplanted layer (1.1 to 2.0 µ m (bottom) in depth).
Databáze:	OpenAIRE
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