Enhanced metallic properties of SrRuO3 thin films via kinetically controlled pulsed laser epitaxy
| Autor: | Jinwoo Hwang, Jared M. Johnson, Sung Seok A. Seo, Ho Nyung Lee, J. H. Gruenewald, Dong-Wook Kim, Maryam Souri, Siheon Ryee, John Nichols, Myung Joon Han, Shinbuhm Lee, J. G. Connell, J. Thompson |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) FOS: Physical sciences 02 engineering and technology Conductivity Epitaxy 7. Clean energy 01 natural sciences Metal Superconductivity (cond-mat.supr-con) Condensed Matter - Strongly Correlated Electrons 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Thin film 010306 general physics Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics Strongly Correlated Electrons (cond-mat.str-el) business.industry Condensed Matter - Superconductivity Materials Science (cond-mat.mtrl-sci) Heterojunction 021001 nanoscience & nanotechnology 3. Good health Condensed Matter - Other Condensed Matter visual_art Electrode visual_art.visual_art_medium Optoelectronics 0210 nano-technology business Joule heating Stoichiometry Other Condensed Matter (cond-mat.other) |
| DOI: | 10.48550/arxiv.1610.06386 |
| Popis: | Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (T_C), which can lead to higher Joule heating and energy loss in the devices. Here, we report that high-quality SRO thin films can be synthesized by controlling the plume dynamics and growth rate of pulsed laser epitaxy (PLE) with real-time optical spectroscopic monitoring. The SRO thin films grown under the kinetically controlled conditions, down to ca. 16 nm in thickness, exhibit both enhanced conductivity and T_C as compared to bulk values, due to their improved stoichiometry and a strain-mediated increase of the bandwidth of Ru 4d electrons. This result provides a direction for enhancing the physical properties of PLE-grown thin films and paves a way for improved device applications. Comment: 8 pages, 4 figures, 1 table |
| Databáze: | OpenAIRE |
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