Electron field emission from ion-implanted diamond
| Autor: | M. McCormack, S. Jin, Wei Zhu, L. Seibles, Alice E. White, Greg Kochanski, Dale Conrad Jacobson |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
congenital
hereditary and neonatal diseases and abnormalities Materials science Physics and Astronomy (miscellaneous) business.industry Material properties of diamond Physics Doping Metallurgy chemistry.chemical_element Diamond Chemical vapor deposition engineering.material Crystallographic defect body regions Field electron emission Ion implantation chemistry hemic and lymphatic diseases parasitic diseases engineering Optoelectronics Boron business |
| Zdroj: | Scopus-Elsevier |
| Popis: | Diamond films and islands grown by chemical vapor deposition were implanted with boron, sodium, and carbon ions at doses of 10 to the power 14-10 to the power 15 /cm². This structural modification at the subsurface resulted in a significant reduction of the electric field required for electron emission. The threshold field for producing a current density of 10 mA/cm² can be as low as 42 V/μm for the as-implanted diamond compared to 164 V/μm for the high quality p-type diamond. When the ion-implanted diamond samples were annealed at high temperatures in order to anneal out the implantation-induced defects, the low-field electron emission capability of diamond disappeared. These results further confirm our earlier findings about the role of defects in the electron emission from undoped or p-type doped diamond and indicate that the improved emission characteristics of as-implanted diamond is due to the defects created by the ion implantation process. |
| Databáze: | OpenAIRE |
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