Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition
| Autor: | Ju-Young Yun, Kyoung-Mun Kim, Soon-Gil Yoon, Jin Sub Jang, Nak-Kwan Chung |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Band gap Analytical chemistry low temperature Capacitance lcsh:Technology Atomic layer deposition chemistry.chemical_compound Thermal Polyethylene terephthalate General Materials Science Thin film HfO2 thin film lcsh:Microscopy plasma-enhanced atomic layer deposition lcsh:QC120-168.85 lcsh:QH201-278.5 lcsh:T Plasma chemistry lcsh:TA1-2040 electrical properties lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering lcsh:Engineering (General). Civil engineering (General) Refractive index lcsh:TK1-9971 |
| Zdroj: | Materials, Vol 13, Iss 2008, p 2008 (2020) Materials Volume 13 Issue 9 |
| ISSN: | 1996-1944 |
| Popis: | HfO2 was deposited at 80&ndash 250 ° C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth per cycle (GPC) is constant, shifted from high temperatures (150&ndash 200 ° C) to lower temperatures (80&ndash 150 ° C) in PEALD. HfO2 deposited at 80 ° C by PEALD showed higher density (8.1 g/cm3) than those deposited by thermal ALD (5.3 g/cm3) and a smooth surface (RMS Roughness: 0.2 nm). HfO2 deposited at a low temperature by PEALD showed decreased contaminants compared to thermal ALD deposited HfO2. Values of refractive indices and optical band gap of HfO2 deposited at 80 ° C by PEALD (1.9, 5.6 eV) were higher than those obtained by using thermal ALD (1.7, 5.1 eV). Transparency of HfO2 deposited at 80 ° C by PEALD on polyethylene terephthalate (PET) was high (> 84%). PET deposited above 80 ° C was unable to withstand heat and showed deformation. HfO2 deposited at 80 ° C by PEALD showed decreased leakage current from 1.4 × 10&minus 2 to 2.5 × 5 A/cm2 and increased capacitance of approximately 21% compared to HfO2 using thermal ALD. Consequently, HfO2 deposited at a low temperature by PEALD showed improved properties compared to HfO2 deposited by thermal ALD. |
| Databáze: | OpenAIRE |
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