Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene
| Autor: | Vito Raineri, Carmelo Vecchio, Emanuele Rimini, Sushant Sonde, Filippo Giannazzo, Rositsa Yakimova |
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| Rok vydání: | 2012 |
| Předmět: |
Local density of states
Materials science CAPACITIVE BEHAVIOR Graphene Interface (computing) Nanotechnology Condensed Matter Physics QUANTUM CAPACITANCE Capacitance Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Quantum capacitance SUBSTRATE law Bilayer graphene Graphene nanoribbons EPITAXIAL GRAPHENE Graphene oxide paper |
| Zdroj: | Physica. E, Low-dimensional systems and nanostructures 44 (2012): 93–96. doi:10.1016/j.physe.2011.01.002 info:cnr-pdr/source/autori:Sonde S, Vecchio C, Giannazzo F, Yakimova R, Raineri V, Rimini E/titolo:Effect of graphene%2F4H-SiC(0001) interface on electrostatic properties in graphene/doi:10.1016%2Fj.physe.2011.01.002/rivista:Physica. E, Low-dimensional systems and nanostructures (Print)/anno:2012/pagina_da:93/pagina_a:96/intervallo_pagine:93–96/volume:44 |
| ISSN: | 1386-9477 |
| Popis: | Electrostatic properties, quantum capacitance (C-q) and local density of states (LDOS) are evaluated for graphene on 4H-SiC(0 0 0 1) by measuring the local capacitance with Scanning Capacitance Spectroscopy (SCS). Two distinct samples were used for comparative study, viz., graphene exfoliated and deposited on 4H-SiC(0 0 0 1)-DG, and graphene grown epitaxially on 4H-SiC(0 0 0 1)-EG. We observed a distinctly lower screening length (r(scr)) and C-q while wider variations in the LDOS for EG. Such differences are attributed to the peculiar interface between EG/4H-SiC(0 0 0 1), which is known to be more or less defective having the presence of positive charges. |
| Databáze: | OpenAIRE |
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