Near edge x-ray absorption fine structure characterization of polycrystalline GaN grown by nitridation of GaAs (001)
| Autor: | P. R. Bressler, M. Lübbe, Dietrich R. T. Zahn, Wolfgang Braun, Thorsten U. Kampen |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Extended X-ray absorption fine structure Wide-bandgap semiconductor Analytical chemistry General Physics and Astronomy Gallium nitride XANES X-ray absorption fine structure Gallium arsenide chemistry.chemical_compound Crystallography chemistry Absorption (electromagnetic radiation) Spectroscopy |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.370791 |
| Popis: | The phase composition and microcrystalline structure of thin gallium nitride (GaN) grown by nitridation of (001) oriented gallium arsenide (GaAs) was investigated by near edge x-ray absorption fine structure (NEXAFS) spectroscopy. The GaN layer was grown by the interaction of atomic nitrogen produced by a rf-plasma source with the clean GaAs surface at a temperature of 700 °C. In this way a GaN film thickness of ≈100 A was obtained after 6 h of nitridation. Using surface sensitive NEXAFS at the nitrogen K edge, the partial nitrogen p density of states was determined. Comparing the data to reference spectra of hexagonal and cubic GaN, the amount of cubic GaN in the nitrided film was estimated to be 20%–25%. Varying the angle of polarization of the synchrotron radiation with respect to the sample surface, the geometric anisotropy of the GaN film, and thus its crystalline structure, was probed, providing information on the orientation of the GaN microcrystallites. The results from the polarization dependent ... |
| Databáze: | OpenAIRE |
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