Advanced activation of ultra-shallow junctions using flash-assisted RTP
| Autor: | S. McCoy, Fabrice Severac, M. Gavelle, J. Gelpey, J. Niess, T. Selinger, D. Bolze, Fuccio Cristiano, Silke Paul, Wilfried Lerch, Peter Pichler, Simona Boninelli |
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| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Silicon Dopant Flash-assisted RTP Annealing (metallurgy) Mechanical Engineering Analytical chemistry chemistry.chemical_element Crystalline and amorphous silicon Semiconductor device Dopant Activation Condensed Matter Physics Secondary ion mass spectrometry chemistry Mechanics of Materials Ultra-shallow junctions General Materials Science Wafer Boron Advanced-logic device |
| Zdroj: | Materials science & engineering. B, Solid-state materials for advanced technology 124-125 (2005): 24–31. doi:10.1016/j.mseb.2005.08.047 info:cnr-pdr/source/autori:W. Lerch (1); S. Paul; (1) J. Niess (1); S. McCoy (2); T. Selinger (2); J. Gelpey (2); F. Cristiano (3); F. Severac (3); M. Gavelle (3); S. Boninelli (4); P. Pichler (5); D. Bolze (6)./titolo:Advanced activation of ultra-shallow junctions using flash-assisted RTP/doi:10.1016%2Fj.mseb.2005.08.047/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2005/pagina_da:24/pagina_a:31/intervallo_pagine:24–31/volume:124-125 |
| DOI: | 10.1016/j.mseb.2005.08.047 |
| Popis: | A key issue associated with the continuous reduction of dimensions of CMOS transistors is the realization of highly conductive, ultra-shallow junctions for source/drain extensions. Millisecond annealing as an equipment technology provides an ultra-sharp temperature peak of 1.6 ms width which favors dopant activation but nearly suppresses dopant diffusion to form extremely shallow, highly electrically-activated junctions without melting the substrate. On boron beamline implanted wafers the formation of junctions at peak temperatures ranging from 1275 up to 1325 °C was investigated. In the special case of boron, silicon wafers deeply pre-amorphized with Ge were also used. The thermal stability of these boron profile distributions was evaluated by subsequent thermal anneals ranging from 250 to 1050 °C with times from a few seconds to several hundred seconds. From these experiments the deactivation/re-activation mechanism for subsequent annealing can be explained. All the junctions were analyzed by four-point probe measurements; selected samples were analyzed by Hall-effect, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM). |
| Databáze: | OpenAIRE |
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