Influence of the Dopant Gas Precursor in P-Type Nanocrystalline Silicon Layers on the Performance of Front Junction Heterojunction Solar Cells
| Autor: | Mathieu Boccard, Julie Dreon, Jan Haschke, Christophe Ballif, Vincent Paratte, Mario Lehmann, Quentin Jeangros, Laurie-Lou Senaud, Luca Antognini, Jean Cattin |
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| Rok vydání: | 2021 |
| Předmět: |
Amorphous silicon
Materials science heterojunction microcrystalline silicon photovoltaic cells doping passivating contact indium tin oxide resistance chemistry.chemical_compound Crystallinity passivation Electrical and Electronic Engineering dopant precursor gas Dopant business.industry Contact resistance Doping Nanocrystalline silicon Heterojunction plasmas Condensed Matter Physics Electronic Optical and Magnetic Materials Indium tin oxide thin films chemistry strategies Optoelectronics boron business nanocrystalline silicon p-layer carrier-selective contact contact |
| Zdroj: | IEEE Journal of Photovoltaics. 11:944-956 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2021.3074072 |
| Popis: | Silicon heterojunction solar cells can employ p-type hydrogenated nanocrystalline silicon nc-Si:H(p) on their front side, since these can provide better transparency and contact resistance compared to hydrogenated p-type amorphous silicon layers. We investigate here the influence of trimethyl boron (TMB) and BF3 as dopant source on the layer properties and its performance in solar cells. Both gases enable high efficiencies but yield a different crystallinity and effective doping. A high BF3 flow lowers the series resistance through a low activation energy of dark lateral conductivity and maintains a high crystallinity. This allows fill factors up to 83%, however with the apparition of a parasitic absorption in the UV. A low TMB flow enables simultaneously a high crystallinity and a low activation energy. As an illustration of this layer potential, a 23.9%-certified efficiency is achieved with a 2 x 2 cm(2) screen-printed device. We finally suggest that similar transport versus transparency trade-offs can be reached for both dopant types for front junction application, while high BF3 flow allowing lower series resistance might be of interest when placed on the rear side. |
| Databáze: | OpenAIRE |
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