Study of patterned GaAsSbN nanowires using sigmoidal model
| Autor: | Rabin Pokharel, Michael Lowe, Hemali Rathnayake, Sean Johnson, Surya Nalamati, Klinton Davis, Hirandeep Kuchoor, Shanthi Iyer |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Yield (engineering) Photoluminescence Band gap Science Nanowire 02 engineering and technology Nitride 01 natural sciences Article 0103 physical sciences 010302 applied physics Multidisciplinary Nanoscale materials business.industry Nanowires Heterojunction Sigmoid function 021001 nanoscience & nanotechnology Electrical and electronic engineering Optoelectronics Medicine 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Scientific Reports, Vol 11, Iss 1, Pp 1-14 (2021) Scientific Reports |
| ISSN: | 2045-2322 |
| Popis: | This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large bandgap tuning of ~ 75 meV, as ascertained from 4 K photoluminescence (PL), over a pitch length variation of 200–1200 nm has been demonstrated. Pitch-dependent axial and radial growth rates show a logistic sigmoidal growth trend different from those commonly observed in other patterned non-nitride III–V NWs. The sigmoidal fitting provides further insight into the PL spectral shift arising from differences in Sb and N incorporation from pitch induced variation in secondary fluxes. Results indicate that sigmoidal fitting can be a potent tool for designing patterned NW arrays of optimal pitch length for dilute nitrides and other highly mismatched alloys and heterostructures. |
| Databáze: | OpenAIRE |
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