Charge and spin transport in a metal-semiconductor heterostructure with double Schottky barriers
| Autor: | S. Wolski, Józef Barnaś, Vitalii K. Dugaev, Taras Slobodskyy, Wiebke Hansen, Cz. Jasiukiewicz |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Physics
Condensed Matter - Materials Science Applied physics Condensed matter physics business.industry Condensed Matter::Other General Physics and Astronomy Schottky diode Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Charge (physics) Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Semiconductor business Spin (physics) |
| Popis: | Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor. 3 pages, 5 figures, presented on The European Conference Physics of Magnetism 2014 (PM'14), June 23-27, 2014 Pozna\'n, POLAND |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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