Variation of Thermo-electric Power of Electronic Semi-Conductors with Vapour Pressure

Autor:	Hogarth Ca
Rok vydání:	1948
Předmět:	Free electron model Multidisciplinary Vapor Pressure Chemistry business.industry Vapor pressure Thermodynamics Ionic bonding Crystal structure Semiconductor Electricity Thermoelectric effect Charge carrier Electronics business Equilibrium constant
Zdroj:	Nature. 161:60-61
ISSN:	1476-4687 0028-0836
DOI:	10.1038/161060b0
Popis:	WHEN the principle of mass action is applied to explain the effect on the electrical properties of certain electronic semi-conductors having an ionic lattice structure, produced by varying the vapour pressure of one of the constituents of the substance, it is found that nf = KPυ1/n, (1) where nf is the concentration of charge carriers, which may be free electrons or holes, K is an equilibrium constant, Pυ is the vapour pressure, and n is a constant, negative for excess and positive for defect semi-conductors, which can be deduced from the chemical structure of the substance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b879a0afe01b6572fc0bc876f3be2661 https://doi.org/10.1038/161060b0 Zobrazit plný text záznamu