Silicon passivation and tunneling contact formation by atomic layer deposited Al2O3/ZnO stacks
| Autor: | Stefan Bordihn, D. Garcia-Alonso, Sjoerd Smit, Wilhelmus M. M. Kessels |
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| Přispěvatelé: | Plasma & Materials Processing, Atomic scale processing, Processing of low-dimensional nanomaterials |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon Passivation chemistry.chemical_element Nanotechnology 02 engineering and technology 7. Clean energy 01 natural sciences Photovoltaics 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Quantum tunnelling 010302 applied physics Range (particle radiation) business.industry Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Optoelectronics 0210 nano-technology business Contact formation Layer (electronics) |
| Zdroj: | Semiconductor Science and Technology, 28(8). Institute of Physics |
| ISSN: | 0268-1242 |
| DOI: | 10.1088/0268-1242/28/8/082002 |
| Popis: | The passivation of Si by Al2O3/ZnO stacks, which can serve as passivated tunneling contacts or heterojunctions in silicon photovoltaics, was investigated. It was demonstrated that stacks with Al2O3 thicknesses >3 nm lead to lower surface recombination velocities (Seff,max < 4c m s −1 )o n n- and p-type Si than single-layer Al2O3 films for a wide range of ZnO thicknesses and irrespective of Al-doping of the ZnO. Stacks with an Al2O3 thickness of 1‐2 nm were found to combine reasonable surface passivation (Seff,max = 100‐700 cm s −1 ) with sufficiently high tunneling current densities (10‐300 mA cm −2 at 700 mV). |
| Databáze: | OpenAIRE |
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