Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride
| Autor: | Hao Zhang, Han Jun, Kah-Wee Ang, Qing-Qing Sun, Weiguo Liu, Wen-Jun Liu, Shi-Jin Ding, Huan Liu, He-Mei Zheng, David Wei Zhang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Infrasound QC1-999 chemistry.chemical_element interface state 02 engineering and technology Nitride 010402 general chemistry black phosphorus 01 natural sciences Nanomaterials Atomic layer deposition Aluminium Electrical and Electronic Engineering Phonon scattering business.industry Physics low-frequency noise field-effect transistor 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics 0104 chemical sciences Electronic Optical and Magnetic Materials chemistry atomic layer deposition Optoelectronics Field-effect transistor 0210 nano-technology business Layer (electronics) Biotechnology |
| Zdroj: | Nanophotonics, Vol 9, Iss 7, Pp 2053-2062 (2020) |
| ISSN: | 2192-8614 2192-8606 |
| Popis: | Black phosphorus (BP) shows great potential in electronic and optoelectronic applications; however, maintaining the stable performance of BP devices over temperature is still challenging. Here, a novel BP field-effect transistor (FET) fabricated on the atomic layer deposited AlN/SiO2/Si substrate is demonstrated. Electrical measurement results show that BP FETs on the AlN substrate possess superior electrical performance compared with those fabricated on the conventional SiO2/Si substrate. It exhibits a large on-off current ratio of 5 × 108, a low subthreshold swing of 2 V−1 s−1 in the temperature range from 77 to 400 K. However, these stable electrical performances are not found in the BP FETs on SiO2/Si substrate when the temperature increases up to 400 K; instead, the electrical performance of BP FETs on the SiO2/Si substrate degrades drastically. Furthermore, to gain a physical understanding on the stable performance of BP FETs on the AlN substrate, low-frequency noise analysis was performed, and it revealed that the AlN film plays a significant role in suppressing the lattice scattering and charge trapping effects at high temperatures. |
| Databáze: | OpenAIRE |
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