Optical modeling of plasma-deposited ZnO films : electron scattering at different length scales
| Autor: | JW Jan-Willem Weber, Bas W. H. van de Loo, K. Sharma, Wilhelmus M. M. Kessels, Sjoerd Smit, Mariadriana Creatore, Harm C. M. Knoops, M. V. Ponomarev |
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| Přispěvatelé: | Plasma & Materials Processing, Interfaces in future energy technologies, Atomic scale processing, Processing of low-dimensional nanomaterials |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Electron mobility
Materials science Phonon scattering Condensed matter physics business.industry Scattering Surfaces and Interfaces Photon energy Condensed Matter Physics Drude model Surfaces Coatings and Films Condensed Matter::Materials Science Ellipsometry Optoelectronics Biological small-angle scattering business Electron scattering |
| Zdroj: | Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 33, 021509-1/13. AVS Science and Technology Society |
| ISSN: | 0734-2101 |
| Popis: | In this work, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented. Because various applications of ZnO films pose a limit on the electron carrier density due to its effect on the film transmittance, higher electron mobility values are generally preferred instead. Hence, insights into the electron scattering contributions affecting the carrier mobility are required. In optical models, the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties. However, the influence of scattering phenomena on the optical mobility depends on the considered range of photon energy. For example, the grain-boundary scattering is generally not probed by means of optical measurements and the ionized-impurity scattering contribution decreases toward higher photon energies. To understand this frequency dependence and quantify contributions from different scattering phenomena to the mobility, several case studies were analyzed in this work by means of spectroscopic ellipsometry and Fourier transform infrared (IR) spectroscopy. The obtained electrical parameters were compared to the results inferred by Hall measurements. For intrinsic ZnO (i-ZnO), the in-grain mobility was obtained by fitting reflection data with a normal Drude model in the IR range. For Al-doped ZnO (Al:ZnO), besides a normal Drude fit in the IR range, an Extended Drude fit in the UV-vis range could be used to obtain the in-grain mobility. Scattering mechanisms for a thickness series of Al:ZnO films were discerned using the more intuitive parameter “scattering frequency” instead of the parameter “mobility”. The interaction distance concept was introduced to give a physical interpretation to the frequency dependence of the scattering frequency. This physical interpretation furthermore allows the prediction of which Drude models can be used in a specific frequency range. |
| Databáze: | OpenAIRE |
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