Anti-crossing of Landau levels of different two-dimensional subbands in GaAs in normal magnetic field
| Autor: | D. Yu. Ivanov, G. Hill, Mohamed Henini, J. C. Portal, Laurence Eaves, E.E. Takhtamirov, Duncan K. Maude, P. C. Main, J.C. Maan, V. A. Volkov, Yu. V. Dubrovskii, E. E. Vdovin |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Physics
Condensed matter physics Strong interaction Landau quantization Electron Correlated Electron Systems / High Field Magnet Laboratory (HFML) Level crossing Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Magnetic field Tunnel effect Electrical and Electronic Engineering Quantum tunnelling Voltage |
| Zdroj: | Physica B-Condensed Matter, 298, 359-363 Physica B-Condensed Matter, 298, 1-4, pp. 359-363 |
| ISSN: | 0921-4526 |
| Popis: | Tunnel current measurements between strongly disordered two-dimensional electron systems in a perpendicular magnetic field are presented. Two-dimensional electron accumulation layers are formed by Si delta doping of GaAs on either sides of an AlGaAs tunnel barrier. Strong interaction between Landau levels of the two-dimensional subbands in each accumulation layers are observed as an anti-crossing of the related peak positions in the tunnel current versus voltage curves as a function of magnetic field. The splitting of the interacting Landau levels is about 10 meV, which cannot be explained by non-parabolicity of the conduction band in GaAs. Possible reasons for the observed interaction are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect