Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers
| Autor: | David Patchett, Fabio Pezzoli, Anna Giorgioni, Maksym Myronov |
|---|---|
| Přispěvatelé: | Pezzoli, F, Giorgioni, A, Patchett, D, Myronov, M |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Photoluminescence
Materials science Atomic and Molecular Physics and Optic Nucleation FOS: Physical sciences chemistry.chemical_element Germanium 02 engineering and technology Substrate (electronics) Epitaxy 01 natural sciences strain 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics Condensed Matter - Materials Science dislocation business.industry Electronic Optical and Magnetic Material Materials Science (cond-mat.mtrl-sci) Heterojunction RP-CVD 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials germanium GeSn FIS/01 - FISICA SPERIMENTALE chemistry Optoelectronics Light emission photoluminescence Dislocation 0210 nano-technology business Biotechnology |
| Popis: | Ge1–xSnx epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a suitable explanation for their temperature-dependent photoluminescence (PL) that is based upon the so far disregarded optical activity of dislocations. By working at the onset of plastic relaxation, which occurs whenever the epilayer releases the strain accumulated during growth on the lattice-mismatched substrate, we demonstrate that dislocation nucleation can be explicitly seen in the PL data. Notably, our findings point out that a monotonic thermal PL quenching can be observed in coherent films, in spite of the indirect nature of the Ge1–xSnx band-gap. Our investigation, therefore, contributes to a deeper understanding of the recombination dynamics in this intriguing group IV alloy and offers insights into crucial phenomena shaping the light emission efficiency. |
| Databáze: | OpenAIRE |
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