Disorder and superconductivity in Mo/Si multilayers
| Autor: | Vratislav Langer, A. S. Pokhila, N. Ya. Fogel, E. I. Buchstab, A. I. Erenburg |
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| Rok vydání: | 1996 |
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| Zdroj: | Physical Review B. 53:71-74 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.53.71 |
| Popis: | ${\mathit{T}}_{\mathit{c}}$ vs ${\mathit{R}}_{\mathrm{\ensuremath{\square}}}$ dependence in thin Mo films and Mo/Si multilayers is simultaneously of three-dimensional (3D) and 2D nature: the main effect of disorder consists in essential increase of ``bulk'' ${\mathit{T}}_{\mathit{c}0}$ which appears to exceed many times ${\mathit{T}}_{\mathit{c}0}$ for pure Mo. The x-ray data enable one to explain the origin of ${\mathit{T}}_{\mathit{c}0}$ enhancement in relatively thick layers. The depression of ${\mathit{T}}_{\mathit{c}}$ with increasing sheet resistance was observed on Mo/Si multilayers in agreement with the theory of superconductivity in disordered 2D metals. It is found that ${\mathit{T}}_{\mathit{c}}$(${\mathit{R}}_{\mathrm{\ensuremath{\square}}}$) dependence for multilayers is quite close to one for single Mo films. \textcopyright{} 1996 The American Physical Society. |
| Databáze: | OpenAIRE |
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