Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
| Autor: | Binit Syamal, C. M. Manoj Kumar, K. Ranjan, Geok Ing Ng, S. C. Foo, M. J. Anand, S. Vicknesh, Xing Zhou, Subramaniam Arulkumaran |
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| Přispěvatelé: | School of Electrical and Electronic Engineering, Research Techno Plaza, Temasek Laboratories |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Electron mobility
Tunnel effect Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Engineering::Electrical and electronic engineering::Electronic systems [DRNTU] Electrical resistivity and conductivity Electric field Wide-bandgap semiconductor Electron Trapping Poole–Frenkel effect |
| Popis: | The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with devices of different gate-drain spacing (Lgd) under the same OFF-state stress. Under high-EF (Lgd = 2 μm), the devices exhibited higher dyn-R DS[ON] degradation but a small ΔVth (∼120 mV). However, at low-EF (Lgd = 5 μm), smaller dyn-R DS[ON] degradation but a larger ΔVth (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R DS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔVth. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by ID-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations. Published version |
| Databáze: | OpenAIRE |
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