InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study

Autor: Wan Khai Loke, Qian Zhou, Soon Fatt Yoon, Vijay Richard D'Costa, Yee-Chia Yeo
Přispěvatelé: School of Electrical and Electronic Engineering
Rok vydání: 2016
Předmět:
Zdroj: Semiconductor Science and Technology. 31:035022
ISSN: 1361-6641
0268-1242
DOI: 10.1088/0268-1242/31/3/035022
Popis: We investigated the optical properties of disordered In0.52Ga0.48P alloys by spectroscopic ellipsometry in the far-infrared to ultraviolet energy range (0.037–5.1 eV). The alloys were grown on Ge (100) substrate by solid-source molecular beam epitaxy. The far-infrared dielectric function reveals two absorption peaks that can be attributed to InP- and GaP-like vibrational modes. The visible-UV dielectric function of In0.52Ga0.48P alloys nearly lattice-matched to Ge shows the critical points E 0, E 1, and E 2, energies of which are determined using a derivative analysis. A weak transition that can be identified as the E 1 + Δ1 critical point is revealed. The vibrational frequencies and the transition energies in In0.52Ga0.48P are lower relative to In0.49Ga0.51P lattice-matched to GaAs. The downward shifts in E 0 and phonons can be estimated using the compositional dependence of E 0 and phonons of bulk alloys. NRF (Natl Research Foundation, S’pore) Accepted version
Databáze: OpenAIRE