p-type silicon drift detectors: first results
| Autor: | G. Odyniec, C.J. Naudet, W. Wilson, B. Krieger, D. Krofcheck, M. Partlan, N.W. Wang, H.W. Rudolph, R. O'Donnell, D. Lewak, J.T. Walton |
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| Rok vydání: | 2002 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon drift detector Silicon Physics::Instrumentation and Detectors business.industry Detector chemistry.chemical_element Electrostatic induction Particle detector Nuclear Energy and Engineering chemistry Optoelectronics Planar process Detectors and Experimental Techniques Electrical and Electronic Engineering business Leakage (electronics) Voltage |
| Zdroj: | Wang, N.W.; Krieger, B.; Krofcheck, D.; Lewak, D.; Naudet, C.J.; O'Donnel, R.; et al.(1995). P-type Silicon Drift Detectors: First Results. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/02q364h3 |
| DOI: | 10.1109/nssmic.1994.474435 |
| Popis: | We have fabricated a 4 cm long, position-sensitive silicon drift detector using high purity, p-type silicon as the starting material. In this paper, we describe the double-sided planar process used to fabricate the detectors and the strategy used to suppress surface carrier inversion due to the presence of fixed positive charge at the Si-SiO/sub 2/ interface. The key issue in optimizing the fabrication process has been to minimize leakage currents and maximize breakdown voltages. Preliminary tests show that a drift signal can be measured across the entire length of the detectors and that the transit time of the holes varies linearly with the position of the induced charge signal. > |
| Databáze: | OpenAIRE |
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