Development of X-Band Transceiver MMIC’s Using GaN Technology
| Autor: | I. Turan, Adnan Gundel, A. Karakuzulu, Oguz Kazan, Fatih Kocer, Ozlem Aydin Civi, Onur Memioglu |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
lcsh:QC501-766
Noise figure GaN 03 medical and health sciences RF switch lcsh:Electricity and magnetism Insertion loss Electrical and Electronic Engineering Monolithic microwave integrated circuit Physics 0303 health sciences Radiation 030306 microbiology business.industry Amplifier RF power amplifier Electrical engineering Switch Low-noise amplifier lcsh:QC1-999 Electronic Optical and Magnetic Materials LNA MMIC X-band Transceiver business lcsh:Physics PA |
| Zdroj: | Advanced Electromagnetics, Vol 8, Iss 2, Pp 1-9 (2019) |
| ISSN: | 2119-0275 |
| Popis: | This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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