Composition controlled synthesis and Raman analysis of Ge-rich Si(x)Ge(1-x) nanowires
| Autor: | Chen Z, Gamini Sumanasekera, Praveen Meduri, Sunkara Mk |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Accurate estimation Vapor phase Alloy Biomedical Engineering Nucleation Nanowire Analytical chemistry Bioengineering General Chemistry engineering.material Condensed Matter Physics symbols.namesake engineering symbols General Materials Science Composition (visual arts) Raman spectroscopy |
| Zdroj: | Journal of nanoscience and nanotechnology. 8(6) |
| ISSN: | 1533-4880 |
| Popis: | Here, we report the synthesis of SixGe1–x nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized SixGe1–x nanowires. Analysis of peak intensities observed for Ge (near 300 cm–1) and the Si-Ge alloy (near 400 cm–1) allowed accurate estimation of composition compared to that based on the absolute peak positions. The results showed that the fraction of Ge in the resulting SixGe1–x alloy nanowires is controlled by the vapor phase composition of Ge. |
| Databáze: | OpenAIRE |
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