Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
| Autor: | Mustafa Öztürk, Engin Arslan, Aykut Ilgaz, Remziye Tülek, Ekmel Ozbay, A. Teke, S. Gökden, Mehmet Kasap, Süleyman Özçelik |
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| Přispěvatelé: | Özbay, Ekmel, Fen Edebiyat Fakültesi |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
Electron mobility
Organic chemicals Interface roughness scattering General Physics and Astronomy Metallorganic chemical vapor deposition Gallium Chemical vapor deposition High quality Scattering High electron mobility transistors Two dimensional Design parameters Scattering mechanisms Sheet resistance Electric conductivity of gases Room temperature mobility Wide-bandgap semiconductor Heterojunction Two-dimensional electron gas (2DEG) C-plane sapphire substrates Transport properties Sapphire Heterojunctions Optoelectronics Temperature dependent Carrier concentration Sheet electron density Electron density measurement Electric resistance Electron density Transistor performance Materials science Corundum Electrons Crystals AlGaN/AlN/GaN Metalorganic chemical vapor deposition Barrier layers Electron densities Heterostructures Theoretical models Room temperature Interface roughness Polarization field business.industry High mobility Two dimensional electron gas Electron gas Heterostructure Optical phonons business Fermi gas Aluminum |
| Zdroj: | Journal of Applied Physics |
| Popis: | Tülek, Remziye (Balikesir Author) The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. The room temperature electron mobility was measured as 1700 cm(2)/V s along with 8.44 X 10(12) cm(-2) electron density, which resulted in a two-dimensional sheet resistance of 435 Omega/square for the Al0.2Ga0.8N/AlN/GaN heterostructure. The sample designed with an Al0.88In0.12N barrier exhibited very high sheet electron density of 4.23 X 10(13) cm(-2) with a corresponding electron mobility of 812 cm(2)/V s at room temperature. A record two-dimensional sheet resistance of 182 Omega/square was obtained in the respective sample. In order to understand the observed transport properties, various scattering mechanisms such as acoustic and optical phonons, interface roughness, and alloy disordering were included in the theoretical model that was applied to the temperature dependent mobility data. It was found that the interface roughness scattering in turn reduces the room temperature mobility of the Al0.88In0.12N/AlN/GaN heterostructure. The observed high 2DEG density was attributed to the larger polarization fields that exist in the sample with an Al0.88In0.12N barrier layer. From these analyses, it can be argued that the AlInN/AlN/GaN high electron mobility transistors (HEMTs), after further optimization of the growth and design parameters, could show better transistor performance compared to AlGaN/AlN/GaN based HEMTs. c 2009 American Institute of Physics. [DOI: 10.1063/1.2996281] Turkiye Cumhuriyeti Kalkinma Bakanligi 2001K120590 Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) 104E090 105E066 105A005 106E198 106A017 Turkish Academy of Sciences |
| Databáze: | OpenAIRE |
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