Diffusion of Ge below the Si(100) Surface: Theory and Experiment

Autor:	Marjorie A. Olmstead, Hannes Jónsson, Blas P. Uberuaga, Arthur P. Smith, Michael Leskovar
Rok vydání:	2000
Předmět:	Diffraction Surface (mathematics) Condensed Matter::Materials Science Auger electron spectroscopy Low energy Materials science Condensed matter physics Doping General Physics and Astronomy Density functional theory Atomic physics Diffusion (business) Layer (electronics)
Zdroj:	Scopus-Elsevier
ISSN:	1079-7114 0031-9007
DOI:	10.1103/physrevlett.84.2441
Popis:	We have studied diffusion of Ge into subsurface layers of Si(100). Auger electron diffraction measurements show Ge in the fourth layer after submonolayer growth at temperatures as low as 500 degrees C. Density functional theory predictions of equilibrium Ge subsurface distributions are consistent with the measurements. We identify a surprisingly low energy pathway resulting from low interstitial formation energy in the third and fourth layers. Doping significantly affects the formation energy, suggesting that n-type doping may lead to sharper Si/Ge interfaces.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5c8fe41e2bd46276d8e3a8c913a0060 https://doi.org/10.1103/physrevlett.84.2441 Zobrazit plný text záznamu