FinFETs with ONO BOX for multi-bit unified memory

Autor: Jong-Hyun Lee, Sungjae Chang, Maryline Bawedin, Wade Xiong, Sorin Cristoloveanu, Jung-Hee Lee
Přispěvatelé: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), World Class University WCU (R33-10055), Oficyna Wydawnicza PW, 2013, ANR-11-JS03-0001,AMNESIA,Dispositifs Mémoires Nanométriques Innovants pour Applications Ultra Basse Consommation(2011), European Project: FP7-ICT-2009.3.1: ,NANOFUNCTION, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Rasolofoniaina, Brigitte, Jeunes Chercheuses et Jeunes Chercheurs - Dispositifs Mémoires Nanométriques Innovants pour Applications Ultra Basse Consommation - - AMNESIA2011 - ANR-11-JS03-0001 - JCJC - VALID, Beyond CMOS Nano-devices for Adding Functionalities to CMOS - NANOFUNCTION - FP7-ICT-2009.3.1: - INCOMING
Rok vydání: 2013
Předmět:
Materials science
Silicon
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
chemistry.chemical_element
Silicon on insulator
Insulator (electricity)
Hardware_PERFORMANCEANDRELIABILITY
02 engineering and technology
Nitride
01 natural sciences
Flash memory
law.invention
law
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Electrical and Electronic Engineering
ComputingMilieux_MISCELLANEOUS
010302 applied physics
Hardware_MEMORYSTRUCTURES
business.industry
Transistor
021001 nanoscience & nanotechnology
Condensed Matter Physics
Atomic and Molecular Physics
and Optics
Surfaces
Coatings and Films
Electronic
Optical and Magnetic Materials
Impact ionization
chemistry
Optoelectronics
Non-volatile random-access memory
0210 nano-technology
business
Zdroj: INFOS 2013
INFOS 2013, Jun 2013, Cracow, Poland. pp.6.2
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2013, 109, pp.330-333. ⟨10.1016/j.mee.2013.03.049⟩
ISSN: 0167-9317
1873-5568
Popis: Advanced FinFETs are fabricated on the ONO buried insulator.The nitride buried insulator can trap charges for the flash memory operation.The same device was investigated for the 1T-DRAM operation.By combining nonvolatile and volatile, multi-bit 1T-DRAM operation was obtained.Analog/logic and memory operation can be performed at the same cell. Floating-body-induced transient phenomena in advanced FinFETs fabricated on SOI with SiO2-Si3N4-SiO2 (ONO) buried insulator were studied for unified memory with multi-bit capability. The nitride layer can store nonvolatile charges by applying back-gate or drain bias. The trapped/detrapped charges in the nitride layer are sensed remotely, by gate coupling, through the variation of the drain current flowing at the front-channel. On the other hand, the transistor silicon body can accommodate volatile charges (generated by impact ionization) that also modify the drain current. Our experiments demonstrate that these two memory modes can be advantageously combined for multi-bit unified memory operation.
Databáze: OpenAIRE
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