A simulation model for dielectric relaxation based on defect diffusion model and waiting time problems
| Autor: | Sıtkı Eker, Süleyman Bozdemir |
|---|---|
| Přispěvatelé: | Çukurova Üniversitesi, Kırşehir Ahi Evran Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümü |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
Physics
Stretched exponential function Stochastic process Modeling and simulation Structure Dielectric Condensed Matter Physics Random walk Electronic Optical and Magnetic Materials Monte Carlo simulations Dipole Diffusion and transport Correlation function Materials Chemistry Ceramics and Composites Relaxation (physics) Defects Statistical physics Diffusion (business) |
| Popis: | 5th International Conference on Dielectric Spectroscopy and Its Applications -- AUG 26-29, 2008 -- Lyon, FRANCE WOS: 000276665500006 We propose a simulation model for dielectric relaxation based on defect diffusion. The defect diffusion model (DDM) has been used to interpret dielectric relaxation and other relaxation phenomena. The essential feature of the model is a cooperative interaction between the relaxing dipole and its nearest-neighbors, containing defects, and the relaxation can only occur when a defect encounters a dipole. In our model we have taken the motion of defect as a stochastic process characterized by successive waiting time problem rather than classical random walk motion. We present computer simulation result for a simple dipolar model system and the dipole correlation function obtained from this new model under various physical conditions appears to be in the form of a stretched exponential function. (c) 2010 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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