Composition Related Electrical Active Defect States of InGaAs and GaAsN
| Autor: | Ladislav Harmatha, B. Sciana, Wojciech Dawidowski, Lubica Stuchlikova, Jaroslav Kováč, A. Kosa, Marek Tłaczała |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
chemistry.chemical_element indium 02 engineering and technology electrically active defects 01 natural sciences nitrogen law.invention Impurity law 0103 physical sciences Solar cell deep energy levels Electrical and Electronic Engineering Spectroscopy deep level transient fourier spectroscopy 010302 applied physics business.industry Intrinsic semiconductor Conduction type 021001 nanoscience & nanotechnology Crystallographic defect TK1-9971 chemistry solar cells ingaas Optoelectronics Electrical engineering. Electronics. Nuclear engineering Transient (oscillation) 0210 nano-technology business gaasn Indium |
| Zdroj: | Advances in Electrical and Electronic Engineering, Vol 15, Iss 1, Pp 114-119 (2017) |
| ISSN: | 1804-3119 1336-1376 |
| DOI: | 10.15598/aeee.v15i1.2023 |
| Popis: | This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition dependent impurities and the investigation of their possible origins. For this purpose a widely utilized spectroscopy method, Deep Level Transient Fourier Spectroscopy, was utilized. The most significant responses of each sample labelled as InG2, InG3 and NG1, NG2 were discussed in detail and confirmed by simulations and literature data. The presence of a possible dual conduction type and dual state defect complex, dependent on the In/N composition, is reported. Beneficial characteristics of specific indium and nitrogen concentrations capable of eliminating or reducing certain point defects and dislocations are stated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|