An S-Band GaN MMIC High Power Amplifier with 50W Output Power and 55% Power Added Efficiency
| Autor: | M. Cirillo, Manuela Sotgia, Walter Ciccognani, Sergio Colangeli, Ernesto Limiti, Rocco Giofre, Ferdinando Costanzo |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Power-added efficiency
Materials science business.industry 020208 electrical & electronic engineering Active electronically scanned array Order (ring theory) 020206 networking & telecommunications Gallium nitride 02 engineering and technology Settore ING-INF/01 - Elettronica Power (physics) chemistry.chemical_compound chemistry 0202 electrical engineering electronic engineering information engineering Harmonic Optoelectronics S band business Monolithic microwave integrated circuit |
| Popis: | This paper presents the experimental results of a monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) in Gallium Nitride (GaN) technology conceived for S- Band active electronically scanned array systems. The MMIC is based on a three-stage architecture and it is realized on a commercially available $\pmb{0.25\mu}\ \mathbf{mGaN}$ process. In order to maximize the efficiency and output power of the HPA, the harmonic terminations of the devices in the final stage were carefully optimized to actuate a class F working condition. Thanks to this, the MMIC is able to deliver an output power higher than 50W with an associated gain and power added efficiency greater than 36 dB and 55%, respectively, in a fractional bandwidth larger than 13% within the S-Band. Even if the HPA comprises three stages, the overall chip area is limited to $\pmb{6\text{x}5\ \text{mm}^{2}}$. |
| Databáze: | OpenAIRE |
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