Sn Substitution by Ge: Strategies to Overcome the Open-Circuit Voltage Deficit of Kesterite Solar Cells
| Autor: | Nicolas Barreau, Léo Choubrac, Sergiu Levcenko, Bart Vermang, Xeniya Kozina, Marcus Bär, Regan G. Wilks, Roberto Félix, Guy Brammertz, Sylvie Harel, Ludovic Arzel, Marc Meuris |
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| Přispěvatelé: | Vermang, Bart/0000-0003-2669-2087, Choubrac, Leo/0000-0003-3236-6376, Felix, Roberto/0000-0002-3620-9899, Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Helmholtz Centre for Materials and Energy (HZB), Friedrich-Alexander Universität Erlangen-Nürnberg (FAU), Institute for Materials Research (IMOMEC), Limburgs Universitair Centrum, Hasselt University (UHasselt), EnergyVille |
| Rok vydání: | 2020 |
| Předmět: |
kesterite
Materials science Energy Engineering and Power Technology chemistry.chemical_element Germanium 02 engineering and technology engineering.material 010402 general chemistry 7. Clean energy 01 natural sciences high voltage Materials Chemistry Electrochemistry Chemical Engineering (miscellaneous) Kesterite Electrical and Electronic Engineering ComputingMilieux_MISCELLANEOUS Open-circuit voltage business.industry Substitution (logic) V-OC germanium High voltage 021001 nanoscience & nanotechnology 0104 chemical sciences CZGSe chemistry [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] engineering Optoelectronics 0210 nano-technology business Voltage |
| Zdroj: | ACS Applied Energy Materials ACS Applied Energy Materials, ACS, 2020, 3 (6), pp.5830-5839. ⟨10.1021/acsaem.0c00763⟩ |
| ISSN: | 2574-0962 |
| DOI: | 10.1021/acsaem.0c00763 |
| Popis: | Current state-of-the-art Cu2ZnSn(S,Se)(4) kesterite solar cells are limited by low open-circuit voltages (V-OC). In order to evaluate to what extent the substitution of Sn by Ge is able to result in higher V oc values, this article focuses on Cu2ZnGeSe4 "CZGSe" devices. To reveal their full potential, different strategies are explored that, in particular, aim at the optimization of the CZGSe/buffer heterojunction. Here, employing hard X-ray photoelectron spectroscopy, it is evidenced that only a combination of different surface treatments is able to remove all detrimental secondary phases. Further improvements are achieved by establishing a solar cell heat treatment in air. A systematic study of the impact of different annealing temperatures and durations determines the best heat treatment parameters to be 60 min at 200 degrees C. Also, Zn(O,S,OH) as a more transparent alternative to the heavy-metal compound CdS buffer layer has been realized. Combining all of the strategies, solar cells with 8.5 and 7.5% total area efficiency have been prepared, which is a record for Sn-free kesterite solar cells and any kesterite solar cell with a Zn(O,S,OH) buffer, respectively. Beyond these records, this work clearly confirms the emerging trend that Ge-for-Sn substitution is a successful strategy to improve the V-OC of kesterite solar cells. This project has received funding from the European Union's Horizon 2020 Research and Innovation Program under grant agreement no. 640868. Choubrac, L (corresponding author), Univ Nantes, UMR6502, CNRS, Inst Mat Jean Rouxel IMN, F-44300 Nantes, France; Helmholtz Zentrum Berlin Mat & Energie GmbH, Dept Struct & Dynam Energy Mat, D-14109 Berlin, Germany. leo.choubrac@helmholtz-berlin.de |
| Databáze: | OpenAIRE |
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