Noise in nanometric s-Si MOSFET for low-power applications

Autor:	J. E. Velázquez, Kristel Fobelets
Rok vydání:	2005
Předmět:	Noise temperature Materials science business.industry Y-factor Hardware_PERFORMANCEANDRELIABILITY Noise figure Noise (electronics) Low-noise amplifier Burst noise Noise generator Hardware_INTEGRATEDCIRCUITS Optoelectronics Flicker noise business
Zdroj:	ResearcherID
ISSN:	0094-243X
Popis:	This paper reports on the influence of the gate length reduction on the noise performance of strained‐Si surface channel MOSFETs for very low power applications. When the gate length is reduced from 100nm to 20nm an increase of the current gain is achieved that nearly doubles the cut‐off frequency of the transistor. This is counterbalanced by a deterioration of the noise figure and the noise resistance of the device for low values of the drain current.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b55ce2ad2beddb0f91ca122e3abde95d https://doi.org/10.1063/1.2036748 Zobrazit plný text záznamu