High K Metal Gate Aluminum CMP Challenges and Solutions

Autor:	Hassan G. Iravani, May Yu, Sherry Xia, Kun Xu, Yuchun Wang, Bogdan Swedek, Lakshmanan Karuppiah, Yufei Chen, You Wang, Wen-Chiang Tu
Rok vydání:	2010
Předmět:	Materials science chemistry business.industry Aluminium Hardware_INTEGRATEDCIRCUITS Optoelectronics chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY business Hardware_LOGICDESIGN High-κ dielectric
Zdroj:	ECS Transactions. 33:69-76
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3489047
Popis:	Because the gate height is critical to transistor performance, controlling gate height precisely and uniformly is the primary challenge for the replacement metal gate aluminum CMP process. A real-time profile control (RTPC) method was combined with a laser-based endpoint system to achieve within-wafer and wafer-to-wafer gate height uniformity requirements. To meet another challenge in Al CMP, defect performance was improved by 20X via consumables selection and process optimization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b54940e078077565c34f323ad334c7bf https://doi.org/10.1149/1.3489047 Zobrazit plný text záznamu