Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography

Autor:	Rattanaporn Norarat, Mari Napari, S. Singkarat, Harry J. Whitlow, Mikko Laitinen, Orapin Chienthavorn, Timo Sajavaara, Nitipon Puttaraksa
Rok vydání:	2011
Předmět:	Materials science ta114 Ion beam business.industry Aperture Microfluidics General Engineering Analytical chemistry Ion beam lithography Ion Ion beam deposition Etching (microfabrication) Optoelectronics business Lithography
Zdroj:	Advanced Materials Research. 254:132-135
ISSN:	1662-8985
DOI:	10.4028/www.scientific.net/amr.254.132
Popis:	The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV16O3+ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b53ed01ea36a86944c7aa5e2be544ba4 https://doi.org/10.4028/www.scientific.net/amr.254.132 Zobrazit plný text záznamu