Raman characterization of polycrystalline silicon: Stress profile measurements

Autor:	Joan Ramon Morante, J.M. Lopez-Villegas, M.S. Benrakkad, Josep Samitier, Alejandro Pérez-Rodríguez, T. Jahwari
Předmět:	Materials science Scattering business.industry Edge (geometry) engineering.material Signal Characterization (materials science) Stress (mechanics) symbols.namesake Polycrystalline silicon symbols engineering Deposition (phase transition) Optoelectronics Raman spectroscopy business
Zdroj:	Scopus-Elsevier
Popis:	Raman spectroscopy is applied for the analysis of polysilicon films deposited on SiO2 sacrificial layers. Different deposition technologies and processing parameters have been studied. The features of the first order Si Raman signal (shape, width and position of maximum) are analyzed in order to evaluate the stress average value in the scattering volume. MicroRaman measurements performed at different points on the edge of the samples allows the estimation of the stress gradient through the polysilicon layers. These measurements are correlated with the structure obtained by using micromachined test structures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5317b9efcb31839c11cf699f58725ec http://www.scopus.com/inward/record.url?eid=2-s2.0-0028595486&partnerID=MN8TOARS Zobrazit plný text záznamu