Sensitivity of Dit extraction at the SiO2/SiC interface using quasi-static capacitance-voltage measurements

Autor:	Belanche, Manuel, Kumar, Piyush, Woerle, Judith, Stark, Roger, Grossner, Ulrike
Přispěvatelé:	Michaud, Jean François, Viet Phung, Luong, Alquier, Daniel, Planson, Dominique
Jazyk:	angličtina
Rok vydání:	2022
Předmět:	Capacitance-Voltage Measurements Interface Characterization MOS Capacitor Quasi-Static Capacitance
Zdroj:	Materials Science Forum, 1062 Silicon Carbide and Related Materials 2021
ISSN:	0255-5476 1662-9752
Popis:	In this work, we compare different quasi-static capacitance-voltage measurement systems by analyzing 4H-SiC n-type MOS capacitors and studying the influence of systematic errors when extracting the interface trap density (Dit). We show that the extracted Dit strongly depends on the calculation of the surface potential due to variations of the integration constant 𝛥�. In addition, the ramp-rate during the quasi-static measurement is identified as a sensitive measurement parameter whose noise level is amplified in the Dit extraction. Materials Science Forum, 1062 ISSN:0255-5476 ISSN:1662-9752 Silicon Carbide and Related Materials 2021 ISBN:978-3-0357-2760-9 ISBN:978-3-0357-3824-7
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4fc508ea5857bbacff9290d9b0419f6 https://hdl.handle.net/20.500.11850/584398 Zobrazit plný text záznamu