Effect of CH4 Plasma Treatment on O2 Plasma Ashed Organosilicate Low-k Dielectrics

Autor: Hualiang Shi, Grant M. Kloster, J. Bao, Huai Huang, Junjun Liu, Paul S. Ho, Mansour Moinpour, Michael D. Goodner
Rok vydání: 2007
Předmět:
Zdroj: Scopus-Elsevier
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-0990-b03-12
Popis: During an O2 plasma ashing process, carbon depletion and subsequent moisture uptake caused increase of keff and the leakage current in an organosilicate (OSG) low-k dielectric. For dielectric restoration, additional CH4 plasma treatment on the O2 plasma ashed OSG low-k dielectric was investigated using angle resolved x-ray photoelectron spectroscopy (ARXPS), XPS depth profiling, x-ray reflectivity (XRR), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and contact angle goniometer. After CH4 plasma treatment on the O2 plasma ashed OSG, the surface carbon concentration and surface hydrophobicity were partially recovered. A dense surface layer containing C=C bonds was found to have formed on the top of the damaged OSG. The C-V hysteresis and the leakage current were reduced as a result of the CH4 plasma treatment. XPS depth profiling revealed that the recovery effect was limited to the surface region.
Databáze: OpenAIRE
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