Ka‐band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back‐off PAE using GaAs PHEMTS
| Autor: | Jeffery Curtis, Anh-Vu Pham, Farshid Aryanfar |
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| Rok vydání: | 2016 |
| Předmět: |
Communications Technologies
Power-added efficiency Materials science Maximum power principle business.industry Amplifier 020208 electrical & electronic engineering RF power amplifier Electrical engineering Power bandwidth 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor Gallium arsenide chemistry.chemical_compound chemistry 0202 electrical engineering electronic engineering information engineering Ka band Electrical and Electronic Engineering Networking & Telecommunications business |
| Zdroj: | IET Microwaves, Antennas & Propagation, vol 10, iss 10 |
| ISSN: | 1751-8733 |
| Popis: | The authors present the design and development of a two stage Doherty power amplifier (DPA) in the Ka-band. The amplifier is fabricated in a 0.15-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The DPA has a centre frequency of 26.6 GHz, a measured small signal gain of 10.5 dB, output power at 1-dB compression point (P1 dB) of 26.9 dBm, maximum power added efficiency (PAE) of 42%, and PAE of 32% at 6 dB back-off power. To the best of the author's knowledge, this DPA is the first millimetre-wave (mm-wave) power amplifier to achieve a record 32% PAE at 6-dB back-off power from 26.9 dBm at Ka-band. |
| Databáze: | OpenAIRE |
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