MOCVD and ALD of High-ϰ Dielectric Oxides Using Alkoxide Precursors
| Autor: | Anthony C. Jones, Jeffrey M. Gaskell, Lesley M. Smith, Yim Fun Loo, Troy D. Manning, Paul R. Chalker, Helen C. Aspinall, Richard J. Potter, Ruairi O'Kane |
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| Rok vydání: | 2006 |
| Předmět: |
Denticity
Chemistry Process Chemistry and Technology Inorganic chemistry Nanotechnology Surfaces and Interfaces General Chemistry General Medicine Dielectric Atomic layer deposition chemistry.chemical_compound Chemical engineering Alkoxide Metalorganic vapour phase epitaxy Layer (electronics) Deposition (law) High-κ dielectric |
| Zdroj: | ChemInform. 37 |
| ISSN: | 1522-2667 0931-7597 |
| DOI: | 10.1002/chin.200621220 |
| Popis: | A number of high-permittivity (κ) dielectric oxides are currently being investigated as alternatives to SiO 2 as the dielectric insulating layer in sub-0.1 μm CMOS technology. Metal-organic (MO)CVD and atomic layer deposition (ALD) are promising techniques for the deposition of these high-K dielectric oxides. In this paper it is shown how the use of "designed" metal alkoxide precursors, containing bidentate donor-functionalized alkoxide ligands, in MOCVD leads to a marked improvement in the physical properties of the MOCVD precursors and process parameters. However, the use of such ligands is not as beneficial in the ALD process, highlighting the very different requirements of MOCVD and ALD precursors. |
| Databáze: | OpenAIRE |
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