Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications

Autor:	Uthayasankaran Peralagu, Bertrand Parvais, Po-Chun Brent Hsu, V. Putcha, Eddy Simoen, Nadine Collaert, Niamh Waldron, Ming Zhao, Kenichiro Takakura, Hongyue Wang, Hao Yu
Přispěvatelé:	Yu, Shaofeng, Zhu, Xiaona, Tang, Ting-Ao, Physics, Electronics and Informatics
Rok vydání:	2020
Předmět:	Materials science Deep-level transient spectroscopy Silicon business.industry chemistry.chemical_element Noise spectroscopy Gallium nitride Trap (computing) chemistry.chemical_compound chemistry Logic gate Optoelectronics Electrical and Electronic Engineering Spectroscopy business
Zdroj:	2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Popis:	This paper describes the application of Deep Level Transient Spectroscopy and Generation-Recombination Noise Spectroscopy to the study of trap levels in III-V and III-N materials and devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b48d48fd0653aed31b43fd47df41f3b2 https://doi.org/10.1109/icsict49897.2020.9278262 Zobrazit plný text záznamu