Hidden spin-polarized bands in semiconducting 2H-MoTe2
| Autor: | J. Kopaczek, P. Scharoch, R. Oliva, Robert Kudrawiec, F. Dybala, Tomasz Woźniak |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science spin–valley locking Condensed matter physics transition metal dichalcogenides photoreflectance 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention law 0103 physical sciences lcsh:TA401-492 General Materials Science Density functional theory lcsh:Materials of engineering and construction. Mechanics of materials Hydrostatic equilibrium two-dimensional materials 0210 nano-technology Electronic band structure density functional theory Spin-½ |
| Zdroj: | Materials Research Letters, Vol 8, Iss 2, Pp 75-81 (2020) Materials Research Letters |
| ISSN: | 2166-3831 |
| Popis: | We present experimental and theoretical studies of the electronic band structure of 2H-MoTe2 at high hydrostatic pressures. Photoreflectance measurements allowed the determination of the pressure coefficient of the direct transitions A and B, which are 2.40(3) and −3.42(18) meV/kbar, respectively. We attribute the sign difference to a strong splitting of the conduction bands with increasing pressure and the presence of hidden spin-polarized states in bulk MoTe2. These results provide direct experimental evidence that the spin–valley locking effect takes place in centrosymmetric transition metal dichalcogenides. |
| Databáze: | OpenAIRE |
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