| Autor: |
Hui Shen, Zongcun Liang, Chengkun Feng, Jiatong Cai, Daming Chen |
| Jazyk: |
angličtina |
| Předmět: |
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| Zdroj: |
Physics Procedia. :51-55 |
| ISSN: |
1875-3892 |
| DOI: |
10.1016/j.phpro.2011.06.056 |
| Popis: |
Surface passivation is one of the key factors to the high efficiency solar cells. In this paper negative charge dielectric films (Al2O3)x(TiO2)1-x used as backside surface passivation for crystalline silicon solar cells were prepared by the low-cost sol-gel method. The relation between the passivation properties of the films and the preparation technology was investigated and optimized. The surface passivation characteristic of the alloyed (Al2O3)x(TiO2)1-x thin films are in correlation with sintering temperature. The surface recombination velocity of 1260 cm/s of the thin layers can be achieved at sintering temperature 400 °C. The alloyed dielectric films also have feasible optical properties which can be acted as backside reflector if combined with metal contact. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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