On the Negative Capacitance of the Au/ZnO/n-GaAs Structures in the Capacitance–Voltage Plots at the Accumulation Zone for High Frequencies

Autor: Esra Erbilen Tanrıkulu, Buket Akın
Rok vydání: 2022
Předmět:
Zdroj: Journal of Electronic Materials. 51:4437-4445
ISSN: 1543-186X
0361-5235
Popis: To investigate the capacitance and conductance characteristics of the Au/ZnO/n-GaAs (MIS) structures, impedance measurements were conducted at 200 kHz and 2 MHz frequency zones at ambient temperature. The experimental findings demonstrate that both the C and G/omega values have frequency dispersion in the accumulation zone. In addition, negative capacitance (NC) behavior has been found in the C-V graphs for high frequencies at roughly 1.5 V, and this behavior becomes more apparent as frequency increases. The minimum values of C observed at the accumulation zone correspond to the maximum values of G/omega, and this change between C and G/omega can be defined as inductive behavior. The impedance method was used to determine essential parameters that can significantly affect the performance of the structure, such as series resistance (R-s) and concentration distribution of surface states (N-ss). Also, some other parameters such as the Fermi energy level (E-F), doping donor atom concentration (N-D), and barrier height (phi(B)) were determined from reverse bias C-2 versus V graphs for all frequencies.
Databáze: OpenAIRE
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