Microcontact Printing of Ultrahigh Density Gold Nanoparticle Monolayer for Flexible Flash Memories
| Autor: | Vellaisamy A. L. Roy, Zong-Xiang Xu, Su-Ting Han, Long-Biao Huang, Xiong-Bo Yang, Ye Zhou |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Transistors Electronic business.industry Mechanical Engineering Transistor Metal Nanoparticles Nanotechnology Flexible electronics Flash memory law.invention Threshold voltage Semiconductor CMOS Mechanics of Materials law Printing General Materials Science Charge carrier Work function Gold business |
| Zdroj: | Advanced Materials. 24:3556-3561 |
| ISSN: | 0935-9648 |
| Popis: | DOI: 10.1002/adma.201201195 Flash memories have recently attracted considerable attention as promising next-generation nonvolatile memories owing to their higher chip density, multi-bit per cell storage properties, and compatibility with the current complementary metal– oxide–semiconductor (CMOS) process. [ 1–4 ] The fl ash memories based on fi eld-effect transistors (FETs) with a fl oating gate architecture work on the variation of the threshold voltage ( V th ) by trapping/detrapping the charge carriers of the semiconductor under external gate bias. To meet the requirements of manipulating the trap levels (work functions of metal) and trap sites (directly related to memory window which can be controlled by varying the density of nanoparticles), employment of nanocrystals fl oating gate is considered to be an alternative approach to replace the planar fl oating gate for information storage. [ 5 , 6 ] Gold nanoparticles (Au NPs) are appropriate material to serve as fl gate due to their chemical stability and high work function. [ 7 ] The Au NPs charge trapping layer can be created by several methods including thermal evaporation, [ 8 , 9 ] chemical process such as electrostatic self-assembly |
| Databáze: | OpenAIRE |
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