Short period p-type AlN/AlGaN superlattices for deep UV light emitters

Autor: Yuriy Kudriavtsev, Sergey Yu. Karpov, Vladimir Mansurov, I. Chary, Mahesh Pandikunta, B. Borisov, Rene Asomoza, Sergey A. Nikishin, Mark Holtz, Ayrton Bernussi, Sandeep Sohal, K. A. Bulashevich, Gautam Rajanna
Rok vydání: 2009
Předmět:
Zdroj: Scopus-Elsevier
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-1202-i10-03
Popis: The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole concentration is ∼ 7×1017 cm-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ∼ 5×10-5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.
Databáze: OpenAIRE
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