Gallium Crystal Chemistry in Synthetic Goethites
| Autor: | Olivier Grauby, Pierre-Etienne Mathé, J.L. Hazemann, Y. Noack, Didier Béziat, Ph. Ildefonse, Ph. de Parseval, François Martin |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1997 |
| Předmět: |
Goethite
010504 meteorology & atmospheric sciences Extended X-ray absorption fine structure Crystal chemistry Chemistry Inorganic chemistry General Physics and Astronomy chemistry.chemical_element 010502 geochemistry & geophysics 01 natural sciences XANES 3. Good health Crystallography Octahedron Impurity visual_art [PHYS.HIST]Physics [physics]/Physics archives visual_art.visual_art_medium Gallium 0105 earth and related environmental sciences Solid solution |
| Zdroj: | Journal de Physique IV Proceedings Journal de Physique IV Proceedings, EDP Sciences, 1997, 7 (C2), pp.C2-821-C2-822. ⟨10.1051/jp4:1997247⟩ |
| ISSN: | 1155-4339 1764-7177 |
| DOI: | 10.1051/jp4:1997247⟩ |
| Popis: | The distribution of Ga and Al atoms within the octahedral sheets of synthetic goethites has been investigated by XRD and Ga K-edge XANES and EXAFS spectroscopies. XRD results indicate a solid solution between goethite (αFeOOH) and GaGoe4 (40 mol% of Ga). The XANES data indicate the presence of 6 Ga in the solid solution. The fitting procedures for EXAFS spectra show no evidence of preferential octahedral site substitutions for Ga. |
| Databáze: | OpenAIRE |
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